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ROHM Semiconductor RGTV60TS65DGC13 IGBT Transistors 2us Short-Circuit Tol 650V 30A FRD Built-in TO-247N Field Stop Trench IGBT

Name: ROHM Semiconductor RGTV60TS65DGC13 IGBT Transistors 2us Short-Circuit Tol 650V 30A FRD Built-in TO-247N Field Stop Trench IGBT
Brand: ROHM Semiconductor

ManufacturerROHM Semiconductor(View more products from this manufacturer)

ModelRGTV60TS65DGC13

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 194 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 60 A