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Width: 1.7 mm
Height: 0.85 mm
Length: 2 mm
Fall Time: 10 ns
Rise Time: 14 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel MOSFET
Qg - Gate Charge: 2.3 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 800 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 8 ns
Typical Turn-Off Delay Time: 16 ns
Id - Continuous Drain Current: 1.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.5 S
Rds On - Drain-Source Resistance: 190 mOhms
Vds - Drain-Source Breakdown Voltage: 45 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
