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ROHM Semiconductor RX3G18BBGC16 MOSFETs RX3G18BBG is a power MOSFET with low on-resistance and High power package, suitable for switching.

Name: ROHM Semiconductor RX3G18BBGC16 MOSFETs RX3G18BBG is a power MOSFET with low on-resistance and High power package, suitable for switching.
Brand: ROHM Semiconductor

ManufacturerROHM Semiconductor(View more products from this manufacturer)

ModelRX3G18BBGC16

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Fall Time: 340 ns

Rise Time: 64 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 210 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 192 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 49 ns

Typical Turn-Off Delay Time: 280 ns

Id - Continuous Drain Current: 270 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 70 S

Rds On - Drain-Source Resistance: 1.47 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V