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Fall Time: 5.7 ns, 5.7 ns
Rise Time: 8.4 ns, 8.4 ns
Technology: Si
Unit Weight: 83 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 8 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.8 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 7.4 ns, 7.4 ns
Typical Turn-Off Delay Time: 11 ns, 11 ns
Id - Continuous Drain Current: 8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 4.2 S, 4.2 S
Rds On - Drain-Source Resistance: 23 mOhms, 23 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
