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Fall Time: 17 ns, 85 ns
Rise Time: 17 ns, 30 ns
Technology: Si
Unit Weight: 56.165 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 3.6 nC, 12 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.25 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 9 ns
Typical Turn-Off Delay Time: 28 ns, 120 ns
Id - Continuous Drain Current: 2.7 S, 2.5 S
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 2.5 S
Rds On - Drain-Source Resistance: 68 mOhms, 72 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
