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Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 150 mW
DC Current Gain hFE Max: 680
Gain Bandwidth Product fT: 320 MHz, 260 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 15 V
Continuous Collector Current: 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 270
Collector- Emitter Voltage VCEO Max: 12 V
Collector-Emitter Saturation Voltage: 90 mV, 100 mV
