STMicroelectronics SCT10N120AG SiC MOSFETS Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ TJ = 1
Manufacturer: STMicroelectronics Model: SCT10N120AG - Contact
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Technology: SiC
Unit Weight: 4.500 g
Channel Mode: Enhancement
Qualification: AEC-Q101
Mounting Style: Through Hole
Qg - Gate Charge: 22 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 150 W
Vgs - Gate-Source Voltage: - 10 V, + 25 V
Id - Continuous Drain Current: 12 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 500 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3.5 V
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