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STMicroelectronics STGB25N40LZAG IGBT Transistors Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ

Name: STMicroelectronics STGB25N40LZAG IGBT Transistors Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
Brand: STMicroelectronics

ModelSTGB25N40LZAG

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Technology: Si

Unit Weight: 1.380 g

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Pd - Power Dissipation: 150 W

Gate-Emitter Leakage Current: 625 uA

Maximum Gate Emitter Voltage: - 12 V, 16 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 435 V

Continuous Collector Current Ic Max: 25 A

Collector-Emitter Saturation Voltage: 1.1 V

Continuous Collector Current at 25 C: 25 A