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STMicroelectronics STGB30H60DLLFBAG IGBT Transistors Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Name: STMicroelectronics STGB30H60DLLFBAG IGBT Transistors Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Brand: STMicroelectronics

ManufacturerSTMicroelectronics(View more products from this manufacturer)

ModelSTGB30H60DLLFBAG

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Technology: Si

Unit Weight: 1.380 g

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Pd - Power Dissipation: 260 W

Gate-Emitter Leakage Current: 250 uA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 60 A