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STMicroelectronics STGB30V60DF IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

Name: STMicroelectronics STGB30V60DF IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
Brand: STMicroelectronics

ManufacturerSTMicroelectronics(View more products from this manufacturer)

ModelSTGB30V60DF

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Technology: Si

Unit Weight: 2.240 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 258 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 30 A

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 60 A