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STMicroelectronics STGD19N40LZ IGBT Transistors Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Name: STMicroelectronics STGD19N40LZ IGBT Transistors Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ
Brand: STMicroelectronics

ModelSTGD19N40LZ

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Technology: Si

Unit Weight: 350 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Pd - Power Dissipation: 125 W

Gate-Emitter Leakage Current: 625 uA

Maximum Gate Emitter Voltage: - 12 V, 16 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 390 V

Continuous Collector Current Ic Max: 25 A

Collector-Emitter Saturation Voltage: 1.35 V