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STMicroelectronics STGSH80HB65DAG IGBT Transistors Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode

Name: STMicroelectronics STGSH80HB65DAG IGBT Transistors Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
Brand: STMicroelectronics

ManufacturerSTMicroelectronics(View more products from this manufacturer)

ModelSTGSH80HB65DAG

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Technology: Si

Unit Weight: 8.200 g

Configuration: Dual

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Pd - Power Dissipation: 250 W

Gate-Emitter Leakage Current: 800 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 83 A