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Width: 3.5 mm
Height: 1.8 mm
Length: 6.5 mm
Fall Time: 55 ns
Rise Time: 30 ns
Technology: Si
Unit Weight: 250 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel MOSFET
Qg - Gate Charge: 7.7 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 8 ns
Typical Turn-Off Delay Time: 22 ns
Id - Continuous Drain Current: 250 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.8 S
Rds On - Drain-Source Resistance: 16 Ohms
Vds - Drain-Source Breakdown Voltage: 800 V
Vgs th - Gate-Source Threshold Voltage: 3 V
