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Width: 4 mm
Height: 1.65 mm
Length: 5 mm
Fall Time: 8 ns
Rise Time: 20 ns
Technology: Si
Unit Weight: 74 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 4.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.6 W
Vgs - Gate-Source Voltage: - 18 V, + 18 V
Typical Turn-On Delay Time: 19 ns
Typical Turn-Off Delay Time: 12 ns
Id - Continuous Drain Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 90 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
