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Fall Time: 51 ns
Rise Time: 11 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channe
Qg - Gate Charge: 2 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 298 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 5 ns
Typical Turn-Off Delay Time: 20 ns
Id - Continuous Drain Current: 160 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.5 S
Rds On - Drain-Source Resistance: 5 Ohms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
