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Width: 10.16 mm
Height: 4.44 mm
Length: 15.37 mm
Fall Time: 60 ns
Rise Time: 77 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1N-Channel
Qg - Gate Charge: 110 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 18 ns
Typical Turn-Off Delay Time: 71 ns
Id - Continuous Drain Current: 157 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 3.5 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 4 V
