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Fall Time: 14.9 ns
Rise Time: 6.8 ns
Technology: Si
Unit Weight: 340 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 6.1 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 39 W
Typical Turn-On Delay Time: 7.7 ns
Typical Turn-Off Delay Time: 15.3 ns
Id - Continuous Drain Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.8 S
Rds On - Drain-Source Resistance: 8 Ohms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
