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Width: 1.5 mm
Height: 0.62 mm
Length: 1.5 mm
Fall Time: 16 ns
Rise Time: 8.6 ns
Technology: Si
Unit Weight: 2.500 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Qg - Gate Charge: 2.9 nC
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 700 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 12.8 ns
Typical Turn-Off Delay Time: 32.1 ns
Id - Continuous Drain Current: 3.9 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 6.2 S
Rds On - Drain-Source Resistance: 54 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 600 mV
