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Width: 5 mm
Height: 1.5 mm
Length: 6 mm
Fall Time: 2.7 ns
Rise Time: 7 ns
Technology: Si
Unit Weight: 157.200 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 12.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 8.5 W
Vgs - Gate-Source Voltage: - 8 V, + 10 V
Id - Continuous Drain Current: 25 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 87 S / 51 S
Rds On - Drain-Source Resistance: 9 mOhms, 2.8 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.1 V
