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Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 200 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 50 ns, 50 ns
Typical Turn-Off Delay Time: 180 ns, 180 ns
Id - Continuous Drain Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 25 mS, 25 mS
Rds On - Drain-Source Resistance: 2.2 Ohms, 2.2 Ohms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
