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Width: 5.02 mm
Height: 20.95 mm
Length: 15.94 mm
Fall Time: 10 ns
Rise Time: 70 ns
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 160 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 400 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 49.2 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 55 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
