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Toshiba TRS4E65H,S1Q Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 4A TO-220-2L

Name: Toshiba TRS4E65H,S1Q Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 4A TO-220-2L
Brand: Toshiba

ModelTRS4E65H,S1Q

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Technology: SiC

Mounting Style: Through Hole

If - Forward Current: 4 A

Ir - Reverse Current: 2 uA

Vf - Forward Voltage: 1.2 V

Pd - Power Dissipation: 60 W

Ifsm - Forward Surge Current: 230 A

Vrrm - Repetitive Reverse Voltage: 650 V