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Fall Time: 6.4 ns
Rise Time: 3 ns
Technology: Si
Unit Weight: 488.500 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel TrenchFET Power MOSFET
Qg - Gate Charge: 50 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 53.6 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10.5 ns
Typical Turn-Off Delay Time: 39.6 ns
Id - Continuous Drain Current: 16 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 23 S
Rds On - Drain-Source Resistance: 27.3 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
