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Fall Time: 36 ns
Rise Time: 4 ns
Technology: Si
Unit Weight: 158 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: TrenchFET Power MOSFET
Qg - Gate Charge: 112 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 2.2 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 12 ns
Typical Turn-Off Delay Time: 120 ns
Id - Continuous Drain Current: 12.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 70 S
Rds On - Drain-Source Resistance: 9.8 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
