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Fall Time: 12 ns, 10 ns
Rise Time: 12 ns, 15 ns
Technology: Si
Unit Weight: 28 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 16 nC, 25 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 7.8 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 10 ns, 15 ns
Typical Turn-Off Delay Time: 25 ns, 30 ns
Id - Continuous Drain Current: 4.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 23 S, 11 S
Rds On - Drain-Source Resistance: 23 mOhms, 44 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
