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Fall Time: 27 ns
Rise Time: 43 ns
Technology: Si
Mounting Style: SMD/SMT
Qg - Gate Charge: 16 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 347 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 38 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 15 S
Rds On - Drain-Source Resistance: 85 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
