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Fall Time: 8 ns, 34 ns
Rise Time: 6 ns, 65 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: TrenchFET Gen IV Power MOSFET
Qg - Gate Charge: 79 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 56.8 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 12 ns, 28 ns
Typical Turn-Off Delay Time: 46 ns, 51 ns
Id - Continuous Drain Current: 48.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 45 nC
Rds On - Drain-Source Resistance: 11 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2.3 V
