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Vgs(th): 0.9V
Vgs (Max): 6V
Gate Charge (Qg): 0.75nC
Power consumption: 150mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 500mA
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 700mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
