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Fall Time: 3 ns
Rise Time: 4 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: TrenchFET Gen IV Power MOSFET
Qg - Gate Charge: 3.8 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.34 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 7 ns, 8 ns
Typical Turn-Off Delay Time: 10 ns
Id - Continuous Drain Current: 1.78 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 7 S
Rds On - Drain-Source Resistance: 160 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 4 V
