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Vishay SI4190ADY-T1-GE3 Power MOSFET, N Channel, 100 V, 18.4 A, 0.0073 ohm, SOIC, Surface Mount

Name: Vishay SI4190ADY-T1-GE3 Power MOSFET, N Channel, 100 V, 18.4 A, 0.0073 ohm, SOIC, Surface Mount
Brand: Vishay

ModelSI4190ADY-T1-GE3

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No. of Pins: 8

Channel Type: N Channel

Power Dissipation: 6

Transistor Mounting: Surface Mount

Transistor Case Style: SOIC

Drain Source Voltage Vds: 100

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 18.4

Drain Source On State Resistance: 8.8

Gate Source Threshold Voltage Max: 2.8

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