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Type: Power MOSFET
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 1.3W
Drain to Source voltage: 20V
Continuous drain current: 6.6A/3.8A
Current - Drain (Id) (25°C): 6.6|3.8A
Field-effect transistor type: N and P-Channel|Common Rain
Gate Charge - (when applying Vgs): 17nC@4.5V
Drain to Source on-state resistance: 20mOhm/60mOhm
On Voltage - (Vgs when Id is applied): 1.5V@250uA
On Resistance - (Rds when Id,Vgs is applied): 20mOhm@9.1A|4.5V
