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FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 1.13W|1.2W
Operating temperature: -55 to 150C
Drain to Source voltage: 30V
Continuous drain current: 3.7A/3A
Current - Drain (Id) (25°C): 3.7|3A
Field-effect transistor type: N and P-Channel
Gate Charge - (when applying Vgs): 16nC@10V
On Voltage - (Vgs when Id is applied): 1V@250uA(Min)
On Resistance - (Rds when Id,Vgs is applied): 53mOhm@4.9A|10V
