Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Type: Power MOSFET
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 2.8W
Operating temperature: -55 to 150C
Drain to Source voltage: 25V
Continuous drain current: 8A
Current - Drain (Id) (25°C): 8A
Field-effect transistor type: 2N-Channel(Dual)
Gate Charge - (when applying Vgs): 18nC@10V
Drain to Source on-state resistance: 23mOhm
On Voltage - (Vgs when Id is applied): 2.2V@250uA
On Resistance - (Rds when Id,Vgs is applied): 23mOhm@7A|10V
Input Capacitance - (Ciss when Vds is applied): 680pF@13V
