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Type: Power MOSFET
Vgs(th): 1 V
Vgs (Max): 8V
Gate Charge (Qg): 40nC
Power consumption: 2.5|6.3W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 12V
Continuous drain current: 6A
Input Capacitance (Ciss): 1400pF
Operating temperature range: -55 to 150C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 28mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
