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FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 3.1W|2.6W
Operating temperature: -55 to 150C
Drain to Source voltage: 30V
Continuous drain current: 4A/3.6A
Current - Drain (Id) (25°C): 4|3.6A
Field-effect transistor type: N and P-Channel
Gate Charge - (when applying Vgs): 7.1nC@5V
On Voltage - (Vgs when Id is applied): 2V@250uA
On Resistance - (Rds when Id,Vgs is applied): 55mOhm@4.8A|4.5V
Input Capacitance - (Ciss when Vds is applied): 435pF@15V
