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Type: Power MOSFET
FET Feature: Standard
Mounting Type: Surface Mount
Power-Maximum: 20.8W
Operating temperature: -55 to 150C
Drain to Source voltage: 40V
Continuous drain current: 6A
Current - Drain (Id) (25°C): 6A
Field-effect transistor type: 2P-Channel(Dual)
Gate Charge - (when applying Vgs): 30nC@10V
Drain to Source on-state resistance: 60mOhm
On Voltage - (Vgs when Id is applied): 3V@250uA
On Resistance - (Rds when Id,Vgs is applied): 60mOhm@5A|10V
Input Capacitance - (Ciss when Vds is applied): 880pF@20V
