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Fall Time: 52 ns
Rise Time: 66 ns
Technology: Si
Qg - Gate Charge: 72 nC
Pd - Power Dissipation: 192 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 30 ns
Typical Turn-Off Delay Time: 46 ns
Id - Continuous Drain Current: 33 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 61 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 5 V
