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Vgs(th): 2.2 V
Vgs (Max): +20|-16V
Gate Charge (Qg): 66nC
Power consumption: 62.5W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 50A
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 2.3mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
