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Vishay SIS890ADN-T1-GE3 Power MOSFET, N Channel, 100 V, 24.7 A, 0.021 ohm, PowerPAK 1212, Surface Mount

Name: Vishay SIS890ADN-T1-GE3 Power MOSFET, N Channel, 100 V, 24.7 A, 0.021 ohm, PowerPAK 1212, Surface Mount
Brand: Vishay

ModelSIS890ADN-T1-GE3

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Channel Type: N Channel

Power Dissipation: 39

Transistor Mounting: Surface Mount

Transistor Case Style: PowerPAK 1212

Drain Source Voltage Vds: 100

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 24.7

Drain Source On State Resistance: 25.5

Gate Source Threshold Voltage Max: 2.5

Datasheet