Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

WeEn Semiconductors PHE13005X/01,127 BJTs - Bipolar Transistors Silicon diffused pwr transistor

Name: WeEn Semiconductors PHE13005X/01,127 BJTs - Bipolar Transistors Silicon diffused pwr transistor
Brand: WeEn Semiconductors

ModelPHE13005X/01,127

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 26 W

DC Current Gain hFE Max: 40

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 300 mV