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Fall Time: 7.5 ns
Rise Time: 9 ns
Technology: SiC
Unit Weight: 1.600 g
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 35 nC
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 113.5 W
Vgs - Gate-Source Voltage: - 4 V, + 15 V
Typical Turn-On Delay Time: 13 ns
Typical Turn-Off Delay Time: 13 ns
Id - Continuous Drain Current: 35 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 11.9 S
Rds On - Drain-Source Resistance: 78 mOhms
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs th - Gate-Source Threshold Voltage: 3.5 V
