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SEM Schottky Emitter:
1.4 nm @ 1 kV
1.2 nm @ 1 kV with Tandem decel
1.6 nm @ 200 V with Tandem decel
0.7 nm @ 15 kV
0.6 nm @ 30 kV (STEM mode)
1.8 nm @ 1 kV (WD 5 mm)
1.3 nm @ 1 kV with Tandem decel (WD 5 mm)
0.9 nm @ 15kV (WD 5 mm)
2.3 nm @20 kV & 10 nA (WD 5 mm)
Beam current: 10 pA – 100 nA
Store Resolution: 32 k × 24 k (up to 50 k × 40 k with optional Atlas 5 3D Tomography module)
Detection Limit: < 4,2 ppm boron in silicon
Lateral Resolution: < 35 nm
Mass/Charge Range: 1-500 Th
Mass Resolution: m/Δm > 500 FWTM
Depth Resolution: < 20nm AlAs/GaAs multilayer system
